Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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N.Lukyanchikova, N.Garbar, V.Kudina, A.Smolanka, E.Simoen, C.Claeys // Microelectronics Reliability – 2013. – V. 53, № 3. – P. 394–399.