V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine

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Sub-THz active assembly with mechanical scanning for security systems

Purpose:

Inspection of content in packages that are transparent in sub-terahertz spectral range (paper, plastic, polyfoam, gypsum plasterboard, unhumid wood, footwear sole, knapsacks, etc.)

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The visible and near-infrared spectrum camera for surveillance at low light conditions

The developed camera (production - end of 2016) that is based on matrix solid-state photodetector with charge-coupled devices (CCD ) and electron multiplying designed for use in vehicles aiming, targeting and surveillance in low light (down to 3x10-4 lux, starry sky with solid cloud cover). Camera is an intensifiers alternative that complement information obtained by thermal and visual systems imaging. Unlike thermal imaging the camera records the weak reflected radiation which simplifies operator work with object recognition.

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Detector of THz/subTHz radiation

  • Spectral region: ~30-300 GHz;
  • Operating temperature: T = 300 K;
  • Noise equivalent power: NEP140 GHz ~3-5*10-10 W/Hz1/2;
  • Sensitive area: S ~40x40 mkm2 (without antenna) and S ~2x2 mm2 (with antenna);
  • Responce time: 10-7 s;
  • Signal at detector output: 2.5 V;
  • Dimensions: 50x90 mm;
  • Diameter of focused  spot (DAiry(140 GHz)): ~ 5 mm.

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Sub-THz active assembly for security applications

Basic technical features:

  • Active mode (using a sub-THz radiation source);
  • Operation radiation frequency: ν ~ 75, ~94, ~140 GHz (bi-frequency radiation sources mode can be available);
  • Detection array: linear array of FET sub-THz detectors;
  • Number of pixels in imagery: >= 2.5*104 (>= 128x200);
  • Detection of dust drugs, pills, blades, ceramics, and other metallic and non-metallic enclosures;

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Integral absolute, differential and gauge pressure sensors

№25 Laboratory  of anisotropic semiconductors
G.G. Babichev, E.O. Zinchenko, S.I. Kozlovskiy

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Lasers and laser systems for medicine

№22 Department semiconductor infrared Photoelectronics
   V.V. Tetorkіn, L.F. Linnik

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Surface plasmon resonance spectrometeR ”PLASMON-5”

№27 Department of Physics and technological bases of sensory materials
Y.V. Ushenin

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Focal plane array with microcooler

№38 The Department for Physics and Technology of Low- Dimensional Systems
F.F. Sizov, V.V. Zabudsky, Yu.A. Melenevsky

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128х128 and 4х288 multielement array photodetectors, based on CdHgTe epitaxial layers

№38 The Department for Physics and Technology of Low- Dimensional Systems
F.F. Sizov, Z.F. Tsybrii

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Mm and sub-mm (THz) detectors based on CdHgTe

№38 The Department for Physics and Technology of Low- Dimensional Systems
F.F. Sizov, V. M. Dobrovolsky

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Системы Кремния-На-Изоляторе (КНИ) и КМОН КНИ - интегральная микросхема ВА86Р

№15 Отдел физико-технических проблем ионно легированных полупроводников и многослойных структур на их основе
В.С.Лысенко, А.Н. Назаров, Л. И. Самотовка

 

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Анализатор газовых смесей  «Электронный нос» ГАЗ-2

№7 Отдел электрических и гальваномагнитных свойств полупроводников
    И.А. Кошец, З.И. Казанцева

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The device for measurement and registration of H2S low concentration in ambient

№9 Department of physical principles of integrated microelectronics
V.G. Litovchenko, T. I. Gorbanyuk

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Surface plasmon resonance spectrometer “PLASMON 6”

№27 Department of Physics and technological bases of sensory materials
Yu. M. Shirshov, Y.V. Ushenin

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Измерительно-вычислительный комплекс для диагностики жидкокристаллических дисплеев СМ-100

№13 Отдел жидких кристаллов
   В.М. Сорокин

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Development of thermal detector elements based on two-dimensional photonic sislicon structures

№20 Department of photonic semiconductor structures
   L.A. Karachevtseva

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Measuring Equipment for Flash Characterization of Photovoltaic Modules

№41 Department of Physical and technical bases semiconductor fotoenerhetyky
   Anatoliy P. Gorban

 

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Somatic cells detector ASK-1

№16 Department of optoelectronic functional transducers
E.P. Matzas, A.S. Pavluchenko, A.L. Kukla

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Sensors of infrared radiation

№26 Department of Physical Chemistry of semiconductor materials
A.V. Sukach

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Development and fabrication of radiation-stable detectors of gamma-radiation based on CdTe and CdZnTe monocrystals

№47 Division of semiconductor radiation detectors
D.V. Korbutyak

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Silicon pressure sensors with separating diaphragm

№25 Laboratory anisotropic semiconductors
    S.І. Kozlovsky

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